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Lateral n–p–n avalanche photodiode with an AlInAs multiplication layer

✍ Scribed by Yagyu, E.; Ishimura, E.; Tomita, N.; Nakaji, M.; Aoyagi, T.; Yoshiara, K.; Tokuda, Y.


Book ID
127334147
Publisher
The Institution of Electrical Engineers
Year
2008
Tongue
English
Weight
131 KB
Volume
44
Category
Article
ISSN
0013-5194

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