## Aluminum nitride thin films with very smooth surfaces have been grown by gas-source molecular beam epitaxy on 4H and 6H silicon carbide substrates. High purity ammonia was used as the nitrogen source in conjunction with Al evaporated from an effusion cell. Streaked reflection high energy electr
✦ LIBER ✦
Lateral inhomogeneous boron segregation during silicon thin film growth with molecular beam epitaxy
✍ Scribed by D. Krüger; G. Lippert; R. Kurps; H.J. Osten
- Book ID
- 103168738
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 784 KB
- Volume
- 135
- Category
- Article
- ISSN
- 0022-0248
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