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Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

✍ Scribed by Wai-Kim Chim; Peng-Soon Lim


Book ID
114538049
Publisher
IEEE
Year
2000
Tongue
English
Weight
230 KB
Volume
47
Category
Article
ISSN
0018-9383

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