Laser transfer doping for contacting n-type crystalline Si solar cells

✍ Scribed by Ferré, Rafel ;Gogolin, Ralf ;Müller, Jens ;Harder, Nils-Peter ;Brendel, Rolf

• Book ID: 105366519
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 268 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127046

✦ Synopsis

Abstract

We demonstrate laser transfer doping (LTD) for producing locally doped regions in surface passivated Silicon wafers. A pulsed laser transfers phosphorus‐doped amorphous silicon from a carrier glass to a surface passivated silicon wafer. We employ this process for producing local high‐low junctions for the formation of n^+^–n back surface field layers that are contacted with Al. The contact's surface recombination velocities and the contact resistances depend on the laser processing and annealing conditions. They range from S~cont~ = 20 to 1500 cm s^−1^ and from R~cont~ = 1 to 1000 mΩ cm^2^, respectively. The combination of acceptable contact resistance and low recombination velocities makes the LTD technique suitable for the formation of the rear contacts of n‐type high‐efficiency solar cells. The simplicity of the process makes it a candidate for industrial production.