Laser pulse induced change of CoSi-SiO-Si structure

✍ Scribed by M Knite; A Medvid; A Grigonis

• Book ID: 104266096
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 277 KB
• Volume: 51
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00169-9

✦ Synopsis

The Q-switched YAG : Nd and CO 2 laser initiated formation has been studied of thin CoSi 2 crystalline layers deposited by coevaporation of the Co+Si mixture on SiO 2 /Si substrates. The electrical and optical properties of the CoSi 2 layers were also determined. High quality resistive crystalline CoSi 2 films were obtained by treating the layer with CO 2 laser radiation of 2 MW/cm 2 to 8 MW/cm 2 intensity. The electrical resistance of the layer decreased by a factor of 9. When this layer is subjected to a Q-switched YAG : Nd laser radiation of the intensity of 20 MW/cm 2 to 35 MW/cm 2 , the magnitude of the resistance increases by a factor of 3 due to clusters of vacancies in the CoSi 2 . The phase of the CoSi 2 and the build-up of the concentration of vacancies were determined by the X-ray diffraction. A correlation between changes in the optical and electrical properties as well as structural changes of the silicide layer was found. It is shown that change in the optical parameters of the resistive films subjected to laser treatment can be used for both remote resistivity control and quality check.