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Laser operation of a heterojunction bipolar light-emitting transistor

✍ Scribed by Walter, G.; Holonyak, N.; Feng, M.; Chan, R.

Book ID
120636324
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
337 KB
Volume
85
Category
Article
ISSN
0003-6951

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## Abstract An approach to produce organic light‐emitting transistors (OLETs) containing a laterally arranged heterojunction structure, which minimizes exciton quenching at the metal electrodes, is described. This device configuration provides an organic light‐emitting diode (OLED) structure where