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Laser induced single-crystal transition in polycrystalline silicon

✍ Scribed by G. Vitali; M. Bertolotti; G. Foti; E. Rimini


Publisher
Springer
Year
1978
Tongue
English
Weight
411 KB
Volume
17
Category
Article
ISSN
1432-0630

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## Abstract The defect properties of laser‐crystallized polycrystalline silicon–germanium (Si–Ge) thin films on glass substrates were investigated with electron spin resonance (ESR) and conductivity measurements. The ESR measurements reveal that laser‐crystallized poly Si~1βˆ’__x__~Ge~__x__~ thin fil