Laser-induced long-lifetime electron tunnelling in biased asymmetric double quantum well

✍ Scribed by Y. Ohtsuki; M.I. Stockman; L.N. Pandey; T.F. George

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 239 KB
• Volume: 23
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0158

✦ Synopsis

Laser (cw)-induced tunnelling dynamics of an electronic wavepacket in a biased asymmetric double quantum well (DWQ) structure is studied numerically, varying the quantum level alignment in the DQW. The Markoff master equation is used to determine the time evolution of the wavepacket that is initially created by a pump pulse. Laser-induced long-lifetime (practically equal to the population relaxation time) electron tunnelling is observed when the Rabi frequency is smaller in magnitude than the dephasing rate. It is shown that this laser-induced effect can be eradicated by adjusting the bias voltage to align the upper two electronic states in the narrow and wide wells.