Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm

✍ Scribed by J. Dong; K. Ueda; A.A. Kaminskii

• Book ID: 102450749
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 184 KB
• Volume: 7
• Category: Article
• ISSN: 1612-2011
• DOI: 10.1002/lapl.201010059

✦ Synopsis

The performance of laser-diode end-pumped Yb:LuAG microchip lasers has been investigated at ambient temperature without active cooling of the gain media. Efficient laser oscillation of Yb:LuAG crystals with different thickness and output couplings was achieved at 1030 and 1047 nm with slope efficiencies of 72 and 54%, correspondingly. The thermal population distribution at the terminated laser level of Yb:LuAG crystal plays an important role in the laser performance. The effects of the thickness of Yb:LuAG crystal and the transmission of output couplers on the laser oscillating wavelength and central wavelength shift were investigated by taking account into the reabsorption loss at lasing wavelength and intracavity laser intensity. P th, abs , W 0.3 0.4 0.5 0.2 0.1 0 20 15 10 5 0 T oc , % t = 1.2 mm 1030 nm 1047 nm t = 2.0 mm 1030 nm 1047 nm Calculated absorbed pump power thresholds of Yb:LuAG microchip lasers as a function of the transmission of the output coupler (Toc) for different thickness of Yb:LuAG crystal