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Laser annealing induced high Ge concentration epitaxial SiGe layer in Si1-xGex virtual substrate

✍ Scribed by Ong, C. Y.; Pey, K. L.; Li, X.; Wang, X. C.; Ng, C. M.; Chan, L.


Book ID
111676489
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
597 KB
Volume
93
Category
Article
ISSN
0003-6951

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