## Abstract Selfβorganized InAs quantum dots (QDs), by the StranskiβKrastanow mode, have been grown by using lowβpressure metalorganic chemical vapor deposition on Vβgroove GaAs substrates. By adjusting the flow rate of AsH~3~ during the growth of InAs QDs, a one dimensional InAs QD array was succe
Laser-action in V-groove-shaped InGaAs-InP single quantum wires
β Scribed by Piester, D.; Bonsch, P.; Schrimpf, T.; Wehmann, H.-H.; Schlachetzki, A.
- Book ID
- 117866460
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 456 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1077-260X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Quenching of ground-state luminescence is observed for strained InGaAs/InP V-groove quantum wires. This is the first experimental evidence for geometrical symmetry breaking of the lowest valence-band states due to pseudomorphic strain, which was previously predicted by us. There is good agreement be
InGaAs/GaAs V-shaped quantum wires grown in grooves with either (111) or (411) sidewalls have been studied by ps-transient photoluminescence as a function of the excitation intensity. The optical nonlinearity associated with the screening of the internal piezoelectric field is temporally monitored b