Large-signal model predicts dynamic behavior of GaAs MESFET model under optical illumination
✍ Scribed by J. M. Zamanillo; C. Navarro; C. Pérez-Vega; A. Mediavilla; A. Tazón
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 334 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0895-2477
- DOI
- 10.1002/mop.1072
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✦ Synopsis
Abstract
This paper is the result of our research on the large‐signal dynamic behavior (pulsed I/V curves) of a GaAs device, in the overall I/V plane, when the incident optical input power is changed. A complete bias‐ and optical‐power‐dependent large‐signal model for a MESFET is determined from experimental S‐parameters, dc, and pulsed measurements. All derivatives of the model shown here are continuous for a realistic description of circuit distortion and intermodulation. The dependencies of circuit elements with optical illumination and the quiescent operating point are evaluated, and a comparison between theoretical and measured results over optical power and bias ranges is shown. Experimental results show a very good agreement with the theoretical analysis. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 25–31, 2001.