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Large-signal behaviour of double-avalanche-region IMPATT diodes

✍ Scribed by P. Chakrabarti; S.C. Choudhury; B.B. Pal


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
637 KB
Volume
30
Category
Article
ISSN
0038-1101

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## Abstract RF properties and avalanche noise generation in opto‐sensitive GaAs, InP, GaInAs, and GaInAsP double‐drift IMPATT diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical