Large-scale synthesis of n-type gallium nitride nanowires using NiI2-decorated carbon nanotubes as a reactant
✍ Scribed by Tsung-Wu Lin; Si-Young Choi; Young-Heon Kim; Malcolm L.H. Green
- Book ID
- 104009091
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 779 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0008-6223
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✦ Synopsis
This study demonstrates the first example of the use of NiI 2 -filled carbon nanotubes (CNTs) for the synthesis of GaN nanowires (NWs). Large quantities of single crystal and n-type GaN NWs were synthesized after NiI 2 -decorated CNTs reacted with Ga 2 O 3 in NH 3 . Comparatively few short GaN NWs (<1 lm) were synthesized in the absence of CNTs, and GaN NWs were found to be synthesized with a reasonable yield using graphite as a reactant.
Therefore, CNTs play no role as a template in the growth of NW, but this growth is assisted by NiI 2 nanocrystals via a vapour-liquid-solid mechanism in which the presence of carbon materials facilitates the reduction of Ga 2 O 3 to Ga 2 O and Ga, thus providing a constant Ga source during the growth of the NW. Furthermore, the use of NiI 2 -filled single wall carbon nanotubes results in a higher NW yield at a low growth temperature (600 °C), indicating that NiI 2 -filled single wall CNTs can serve as an effective reactant for the synthesis of GaN NWs.