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Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers

โœ Scribed by Norio Hayafuji; Motoharu Miyashita; Hisao Kumabe; Toshio Murotani


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
413 KB
Volume
106
Category
Article
ISSN
0022-0248

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