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Large-scale electronic-structure theory and nanoscale defects formed in cleavage process of silicon

✍ Scribed by T. Hoshi; R. Takayama; Y. Iguchi; T. Fujiwara


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
306 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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