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L-band high power silicon p-i-n diode switch

✍ Scribed by Stachejko, V.


Book ID
121851795
Publisher
IEEE
Year
1971
Tongue
English
Weight
278 KB
Volume
59
Category
Article
ISSN
0018-9219

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## Abstract Low‐cost UHF‐band __p‐i‐n__ diodes are used to develop high‐performance __L__‐band series and parallel switches. To stop the rectification of large RF signals, the diodes are biased at a large reverse‐bias voltage. Parasitic elements of the diodes are tuned out using LC circuits in bias