✦ LIBER ✦
Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel
✍ Scribed by Zhao, Y.; Jurkovic, M.J.; Wang, W.I.
- Book ID
- 114537199
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 55 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0018-9383
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