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Kinetics of electron induced desorption of hydrogen in nanostructured porous silicon

✍ Scribed by Ruano, G. D. ;Ferron, J. ;Arce, R. D. ;Koropecki, R. R.

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 338 KB
Volume: 208
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201000015

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✦ Synopsis

Abstract

We found that nanostructured porous silicon obtained by anodization desorbs hydrogen under electron bombardment. The kinetics of this electron‐induced effusion can be explained neither in terms of thermal processes nor by direct transference of energy from the impinging electron to the SiH bonds. We show that short lived‐large energy fluctuations (SLEFs), occurring during bimolecular recombination processes of carriers produce both, a midgap increment of the density of electronic defect states and hydrogen desorption.

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