It is necessary to take quantum effects into account in the design of nanometerscale high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). To achieve this, an effective potential method is applied to drift-diffusion (DD)-based simulations of the threshold-voltage
β¦ LIBER β¦
Kinetic simulation tools for nano-scale semiconductor devices
β Scribed by Alex Fedoseyev; Vladimir Kolobov; Robert Arslanbekov; Andrzej Przekwas
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 638 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
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