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Kinetic simulation tools for nano-scale semiconductor devices

✍ Scribed by Alex Fedoseyev; Vladimir Kolobov; Robert Arslanbekov; Andrzej Przekwas


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
638 KB
Volume
69
Category
Article
ISSN
0167-9317

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πŸ“œ SIMILAR VOLUMES


Simulation of nanometer-scale semiconduc
✍ Eiichi Sano πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 662 KB

It is necessary to take quantum effects into account in the design of nanometerscale high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). To achieve this, an effective potential method is applied to drift-diffusion (DD)-based simulations of the threshold-voltage

Mixed finite volume methods for semicond
✍ Riccardo Sacco; Fausto Saleri πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 689 KB

We deal with the two-dimensional numerical solution of the Van Roosbroeck system, widely employed in modern semiconductor device simulation. Using the well-known Gummel's decoupled algorithm leads to the iterative solution of a nonlinear Poisson equation for the electric potential and two linearized