Kinetic critical thickness for surface wave instability vs. misfit dislocation formation in GexSi1−x/Si (100) heterostructures
✍ Scribed by D.D. Perovic´; B. Bahierathan; H. Lafontaine; D.C. Houghton; D.W. McComb
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 539 KB
- Volume
- 239
- Category
- Article
- ISSN
- 0378-4371
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✦ Synopsis
The kinetic critical thicknesses for surface wave formation and misfit dislocation generation in UHVCVD-grown GeSi/Si have been quantitatively determined using microscopical techniques. A refined morphological instability theory has been developed using a coupled continuum/atomistic treatment that incorporates a nucleation barrier to the onset of surface wave formation. The theory' accurately predicts the onset of surface wave formation as a function of thickness, composition, temperature and deposition rate. The interplay between misfit dislocation generation and surface wave formation can be elucidated from two-dimensional strain relaxation instability diagrams obtained from a 4-D parameter space.