The dissolution of single crystal silicon by aqueous solutions' of hydrofluoric acid and chromium (VI) oxide was studied as a function of the resistivity of silicon and the composition of the etchant . In the concentration range under study, the dissolution rate is dependent on the resistivity of th
β¦ LIBER β¦
Junction delineation and dislocation revealing in silicon by the HIO4-HF-H2O system
β Scribed by I.F. Nicolau
- Publisher
- Elsevier Science
- Year
- 1969
- Tongue
- English
- Weight
- 241 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0038-1101
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