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Junction capacitance study of an oxygen impurity defect exhibiting configuration relaxation in amorphous silicon–germanium alloys deposited by hot-wire CVD

✍ Scribed by Shouvik Datta; J. David Cohen; Yueqin Xu; A.H. Mahan; Howard M. Branz


Book ID
116670991
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
168 KB
Volume
354
Category
Article
ISSN
0022-3093

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