IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures || On the Stress Field and Dislocation Emission of an Elliptically Blunted Mode III Crack with Surface Stress Effect
β Scribed by Cocks, Alan; Wang, Jianxiang
- Book ID
- 120606419
- Publisher
- Springer Netherlands
- Year
- 2012
- Tongue
- Dutch
- Weight
- 496 KB
- Edition
- 2013
- Category
- Article
- ISBN
- 9400749112
No coin nor oath required. For personal study only.
β¦ Synopsis
This volume constitutes the proceedings of the IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures, held in Beijing, 8-12 August, 2010. The symposium brought together the most active scientists working in this area from the fields of solid mechanics, composites, physics, and materials science and summarized the state-of-the-art research results with a view to advancing the frontiers of mechanics and materials physics. Β Β Β Β Β Β Nanomaterials and heterostructures have a large fraction of their atoms at surfaces and Β interfaces. These atoms see a different environment to those in the interior and can have a substantial effect on the overall mechanical and physical behaviour of a material. The last decade has witnessed a growing interest in the study of surfaces and how the surface behaviour couples with that of the bulk to determine the overall system response. The papers in this proceedings cover: extension of continuum mechanics and thermodynamics to the nano-scale; multiscale simulations; surface effects in monolithic nano-scale elements and nanostructures;Β mechanical and physical properties of nanomaterials and heterostructures; self-assembly, etc. The surface stress effect is inherently a multidisciplinary and fertile field; the Symposium truly reflects these features. Β This IUTAM Symposium was also dedicated to Professor Bhushan L Karihaloo of Cardiff University on his impending retirement, in recognition of his contributions to the fields of solid mechanics and nanomechanics, and to IUTAM activities in general.
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