Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO[sub 2]/Si interface by CO annealing

✍ Scribed by Pongracz, A.; Hoshino, Y.; D’Angelo, M.; Cavellin, C. Deville; Ganem, J.-J.; Trimaille, I.; Battistig, G.; Josepovits, K. V.; Vickridge, I.

• Book ID: 120429504
• Publisher: American Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 511 KB
• Volume: 106
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3173278