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Isothermal capacitance transient spectroscopy study of defect states in polycrystalline diamond films

✍ Scribed by Kiyota, H.; Okushi, H.; Okano, K.; Akiba, Y.; Kurosu, T.; Iida, M.

Book ID
121302732
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
440 KB
Volume
2
Category
Article
ISSN
0925-9635

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## Abstract Deep level transient spectroscopies (DLTS) applied to Schottky junctions made on homoepitaxial boron‐doped diamond films show the existence of two traps. A deep acceptor, negatively charged and strongly attractive for holes, 1.57 eV above the valence band edge displays the characteristi