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Irradiation effects of 4He+ beam on zeolites and hydrogenated silicon

✍ Scribed by H Salah; B Touchrift; A Azzouz; S Tobbeche


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
471 KB
Volume
46
Category
Article
ISSN
0042-207X

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Effect of 4MeV electron beam irradiation
✍ K. Siraj; M. Khaleeq-ur-Rahman; M.S. Rafique; T. Nawaz πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 582 KB

Pulsed KrF excimer laser is used to deposit tetrahedral amorphous carbon (ta-C) thin films on Si (1 1 1) single crystal substrates at room temperature under vacuum $10 Γ€6 mbars. The pristine deposited films are then irradiated by 4 MeV electron beam at doses varying from 1000 to 4000 cGy. Analysis t