Iron diffusion in silicon under external stress

✍ Scribed by K. Suzuki; Y. Yoshida; T. Kamimura; M. Ichino; K. Asahi

• Book ID: 103887734
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 215 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.188

✦ Synopsis

M össbauer absorber experiments on Fe doped Si are performed, for the first time, under external stresses up to 44 MPa using an Instron-type tensile testing machine, in order to study a stress-induced diffusion of Fe impurities in silicon. The M össbauer spectra are analyzed in terms of two sets of Lorentzian corresponding to substitutional and interstitial Fe components, respectively. The observed spectra change largely when tensile stress is applied on the 57 Fe-deposited side: The interstitial line gets broader due to Fe jumps with a jump rate of 10 6 s À1 . Furthermore, a line broadening is also observed for the substitutional component under the external stress, thus indicating that the stress/strain field largely affects the iron jumps in the Si matrix.