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[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - SUPREM 3.5, process modeling of gallium arsenide

✍ Scribed by Deal, M.D.; Hansen, S.E.; Anholt, R.; Chou, S.; Plummer, J.D.; Dutton, R.W.; Sigmon, T.W.; Stevenson, D.A.; Helms, C.R.; Bravman, J.C.

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