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[IRE 1983 International Electron Devices Meeting - ()] 1983 International Electron Devices Meeting - Electron-beam fabrication of quarter-micron T-shaped-gate FETs using a new tri-layer resist system

✍ Scribed by Chao, P.C.; Smith, P.M.; Wanuga, S.; Hwang, J.C.M.; Perkins, W.H.; Tiberio, R.; Wolf, E.D.


Book ID
121298926
Publisher
IRE
Year
1983
Weight
564 KB
Category
Article

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