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IR light emission from charge oscillations in semiconductor double wells

✍ Scribed by W. Pötz


Book ID
102615057
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
110 KB
Volume
20
Category
Article
ISSN
0749-6036

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✦ Synopsis


A microscopic approach to the carrier dynamics in semiconductor heterostructures is used to study structural dephasing and phase breaking due to carrier-carrier interactions in GaAlAs-GaAs double wells. Analysis of interband polarizations allows a quantitative account of the destruction of phase coherence and its consequences on the frequency spectrum of the THz dipole radiation emitted by the carriers.


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