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Ionization effects on damage yield in ion irradiation of semiconductors

โœ Scribed by Pabst, Heiner J.


Book ID
127192411
Publisher
Informa UK (Taylor & Francis)
Year
1975
Weight
264 KB
Volume
25
Category
Article
ISSN
0033-7579

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Effect of high electronic excitation in
โœ W. Wesch; A. Kamarou; E. Wendler; A. Undisz; M. Rettenmayr ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 413 KB

The damage evolution due to high electronic energy deposition during 375 MeV Xe and 593 MeV Au ion irradiation was studied in the semiconductors InP, GaP, GaAs, AlAs and Ge using RBS and TEM. In InP the high electronic energy deposition leads to the formation of amorphous tracks. In the other materi