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Ion plating conference

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 102 KB
Volume: 27
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(77)80795-1

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Classified abstracts 4170-4178 30 4170. Ge-GaAs (110) interface formation. (USA) The heterojunction chemistry for Ge grown by molecular beam epitaxy (MBE) on in situ cleaved GaAs exhibits significant interdiffusion in short times at growth temperatures T~ of 430°C (significantly lower critical TG th