✦ LIBER ✦

Ion-implanted polysilicon diffusion sources

✍ Scribed by A.E. Michel; R.H. Kastl; S.R. Mader

Publisher: Elsevier Science
Year: 1983
Weight: 427 KB
Volume: 209-210
Category: Article
ISSN: 0167-5087
DOI: 10.1016/0167-5087(83)90873-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of polysilicon thin-fil

Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation

✍ M.S. Shieh; Y.J. Lin; C.M. Yu; T.F. Lei 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 223 KB

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain

Ion sources and implantation systems

✍ John H. Keller; James W. Robinson 📂 Article 📅 1987 🏛 Elsevier Science ⚖ 834 KB

Diffusion of zinc into ion-implanted gal

Diffusion of zinc into ion-implanted gallium arsenide

✍ A.J.N. Houghton; B. Tuck 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 750 KB

Non-mass analysed ion implantation using

Non-mass analysed ion implantation using microwave ion source

✍ K Tokiguchi; H Itoh; N Sakudo; H Koike; T Saitoh 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 354 KB

Performance of a CMOS compatible polysil

Performance of a CMOS compatible polysilicon bipolar transistor with high energy ion implanted collector

✍ A. Marty; N. Degors; J. Kirtsch; A. Chantre; A. Nouailhat 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 242 KB

Diffusion and trapping of ion-implanted

Diffusion and trapping of ion-implanted helium in nickel

✍ M.B. Lewis 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 636 KB