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Ion implantation of rare earth ions for light emitters

✍ Scribed by Ch. Buchal; S. Wang; F. Lu; R. Carius; S. Coffa


Book ID
114165443
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
204 KB
Volume
190
Category
Article
ISSN
0168-583X

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## Abstract The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery