✦ LIBER ✦

Ion implantation of group IV or VI elements for n-type doping of InP

✍ Scribed by M.C. Ridgway; P. Kringhøj; C.M. Johnson

Book ID: 113284936
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 427 KB
Volume: 96
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(94)00507-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

N type doping of inp by ion implantation

✍ R. S. Sussmann 📂 Article 📅 1983 🏛 Springer US 🌐 English ⚖ 647 KB

p-π Conjugation in compounds of the EX3t

p-π Conjugation in compounds of the EX3type for elements in groups IV–VI

✍ E. N. Tsvetkov; M. I. Kabachnik 📂 Article 📅 1973 🏛 Springer 🌐 English ⚖ 471 KB

n-Type Doping for Single-Walled Carbon N

n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam

✍ Kamimura, Takafumi; Yamamoto, Kazuhiro; Kawai, Takushi; Matsumoto, Kazuhiko 📂 Article 📅 2005 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 121 KB

Cleavage of Mn-Mn bond in dimeric mangan

Cleavage of Mn-Mn bond in dimeric manganese carbonyl by halides of group IVB elements as a method for synthesis of bimetallic complexes of type R4−nE[Mn(CO)5]n(E=Ge, Sn, or Pb)

✍ A. N. Nesmeyanov; K. N. Anisimov; N. E. Kolobova; V. N. Khandozhko 📂 Article 📅 1978 🏛 Springer 🌐 English ⚖ 219 KB