✦ LIBER ✦

Ion-implantation-induced phase separation and crystallization in lithia-silica glasses

✍ Scribed by G.W. Arnold; P.S. Peercy; B.L. Doyle

Book ID: 107833947
Publisher: Elsevier Science
Year: 1981
Weight: 618 KB
Volume: 182-183
Category: Article
ISSN: 0029-554X
DOI: 10.1016/0029-554x(81)90803-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Luminescence methods for study of phase

Luminescence methods for study of phase separation and crystallization in glasses

✍ H. Mack; G. Boulon; Renata Reisfeld 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 145 KB

Nitrogen-ion-implantation-induced phase

Nitrogen-ion-implantation-induced phase formation and texture in titanium

✍ Bernd Rauschenbach; Kurt Helming 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 554 KB

Phase separation and polymer crystalliza

Phase separation and polymer crystallization in a poly(4-methyl-1-pentene)–dioctylsebacate–dimethylphthalate system via thermally induced phase separation

✍ Haijun Tao; Jun Zhang; Xiaolin Wang; Jiali Gao 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 821 KB

## Abstract The effects of the polymer concentration and quenching temperature on the phase separation, the membrane morphology and polymer crystallization behavior in a poly(4‐methyl‐1‐pentene) (TPX)‐dioctylsebacate (DOS)‐dimethylphthalate (DMP) system via thermally induced phase separation were s

Crystallization behavior of PVDF in PVDF

Crystallization behavior of PVDF in PVDF-DMP system via thermally induced phase separation

✍ Minghao Gu; Jun Zhang; Xiaolin Wang; Wenzhong Ma 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 655 KB

Color center formation in silica glass i

Color center formation in silica glass induced by high energy Fe and Xe ions

✍ Mingwang Ma; Xiliang Chen; Kang Yang; Xiaomin Yang; Youmei Sun; Yunfan Jin; Zhiy 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 651 KB

Silica glass samples were implanted with 1.157 GeV 56 Fe and 1.755 GeV 136 Xe ions to fluences range from 1 Â 10 11 to 3.8 Â 10 12 ions/cm 2 . Virgin and irradiated samples were investigated by ultraviolet (UV) absorption from 3 to 6.4 eV and photoluminescence (PL) spectroscopy. The UV absorption in

A comparative study of ion implantation

A comparative study of ion implantation and irradiation-induced defects in Ge crystals

✍ V.P. Markevich 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 334 KB

The possibility of making devices which use the high charge carrier mobility of Ge in mainstream semiconductor technology has drawn attention to the very limited understanding of ion implantation damage in germanium and the defect reactions associated with its removal. Results of DLTS and high-resol