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Ion implantation effects in GaSb

โœ Scribed by A.G. Milnes; Xiaolei Li; A.Y. Polyakov; N.B. Smirnov; A.V. Govorkov; O.M. Borodina; I.V. Tunitskaya; E.A. Kozhukhova; A.G. Mil'vidskaya


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
595 KB
Volume
27
Category
Article
ISSN
0921-5107

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Quantum effects in ion implanted devices
โœ D.N. Jamieson; V. Chan; F.E. Hudson; S.E. Andresen; C. Yang; T. Hopf; S.M. Hearn ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 352 KB

Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because of the need to control quantum states at the level of individual atoms, electrons or photons. We have used ion implantation to fabricate devices on the