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Ion implantation and ion milling in MBE Hg1−xCdxTe films

✍ Scribed by O.I. Fitsych; A.V. Voitsekhovskii; D.V. Grigorjev; N.N. Mikhailov; N.H. Talipov; K.D. Mynbaev; I.I. Izhnin


Book ID
113823370
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
274 KB
Volume
272
Category
Article
ISSN
0168-583X

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Arsenic ion implantation in Hg1-xCdxTe
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Structural changes in arsenic ion-implan
✍ Fodchuk, I. ;Zaplitnyy, R. ;Kazemirskiy, T. ;Swiatek, Z. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 602 KB

## Abstract Results of X‐ray investigations of Hg~1–__x__~ Cd~__x__~ Te (__x__ = 0.25) epitaxial layers after single and two‐stage arsenic ion implantation with the energy __E__ = 100 keV are represented. It has been established that for doses __D__~1~ = 2 × 10^14^ ions/cm^2^ and __D__~2~ = (2 × 10