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Ion-beam synthesis and stability of GaAs nanocrystals in silicon

✍ Scribed by White, C. W.; Budai, J. D.; Zhu, J. G.; Withrow, S. P.; Aziz, M. J.

Book ID
119950959
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
412 KB
Volume
68
Category
Article
ISSN
0003-6951

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## Abstract We have studied the ion‐beam synthesis of GaSb nanocrystals in Si by high‐fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED, RS, and photoluminescence (PL) were employed to characterize the implanted layers. It was found that the nanocrystals size increa