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Ion beam mixing of metal-sapphire interfaces

โœ Scribed by L. Romana; P. Thevenard; R. Brenier; G. Fuchs; G. Massouras


Book ID
113278986
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
453 KB
Volume
32
Category
Article
ISSN
0168-583X

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Orientation dependent ion beam mixing of
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Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backsca