Ion beam luminescence of Nd:YAG
β Scribed by M. Khanlary; D.E. Hole; P.D. Townsend
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 364 KB
- Volume
- 227
- Category
- Article
- ISSN
- 0168-583X
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β¦ Synopsis
Luminescence recorded during ion beam implantation of Nd:YAG has proved valuable in sensing structural and local crystal field changes caused by waveguide fabrication in this laser material. The relative line intensities from Nd are sensitive to excitation rate and so the spectra differ strongly between H + and H ΓΎ 2 excitation, with further changes in the examples using He + and N + ions. The overall intensities are reduced at lower temperatures, as well as showing variations in relative line patterns. Some suggestions of component lines and weak broad bands are offered in terms of trace rare earth and other impurities.
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Ion beam induced luminescence (IBIL) has been exploited for the first time in the analysis of inorganic painting pigments. The elemental constituents of the different compounds have been determined by particle induced X-ray emission (PIXE). The acquisition time of each spectrum ranges from 100 ms to