Ion beam induced modification in GeOx thin films: A phase separation study
β Scribed by Y. Batra; D. Kabiraj; S. Kumar; D. Kanjilal
- Book ID
- 104094543
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 893 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0257-8972
No coin nor oath required. For personal study only.
β¦ Synopsis
Formation of Ge crystallites in GeO x matrix as a result of heavy ion irradiation is reported. Micro-Raman spectra of the films show the evolution of Ge crystallite regions in GeO x thin films upon ion irradiation with 100 MeV Au. Transmission electron microscopic studies of the irradiated films revealed the presence of Ge crystallites. Crystallinity of the Ge nanoparticles was confirmed by high-resolution electron microscope images. Atomic force microscopy was employed to study the modifications in surface morphology of GeO x films before and after irradiation. Formation of Ge nanocrystallites has been explained on the basis of phenomenon of ion beam induced phase separation.
π SIMILAR VOLUMES
Diamond and DLC thin films deposited using hot-filament chemical vapour deposition technique at various parameters were irradiated with 50 MeV ST' ions. The resulting microstructural changes were studied using X-ray diffraction and scanning electron microscopy. All the samples showed the development