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Ion-beam-induced epitaxial crystallization of Si due to diffusion of point defects from crystalline and amorphous regions to the interphase boundary

✍ Scribed by Stepina, N. P. ;Kachurin, G. A. ;Popov, V. P. ;Romanov, S. I.


Book ID
105383994
Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
427 KB
Volume
141
Category
Article
ISSN
0031-8965

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