Ion beam induced charge imaging of epita
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P.J. Sellin; D. Hoxley; A. Lohstroh; A. Simon; W. Cunningham; M. Rahman; J. Vait
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Article
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2004
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Elsevier Science
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English
β 301 KB
We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 mm thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4 Γ