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Ion-beam-induced amorphization/crystallization during buried oxide layer formation

✍ Scribed by M.C. Ridgway; R. Loccisano; J.S. Williams; A.P. Pogany; D.K. Sengupta

Book ID
119124415
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
420 KB
Volume
10
Category
Article
ISSN
0167-577X

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## Abstract We report on in‐situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ion‐beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of ∼5 Γ— 10^17^ ions/cm^2^ at ion in