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Ion beam analysis of VLS grown Ge nanostructures on Si

โœ Scribed by J.L. Taraci; T. Clement; J.W. Dailey; J. Drucker; S.T. Picraux

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
242 KB
Volume
242
Category
Article
ISSN
0168-583X

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โœ Zh.V. Smagina; P.L. Novikov; V.A. Zinovyev; V.A. Armbrister; S.A. Teys; A.V. Dvu ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 584 KB

Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase of Ge nanoislands density and decrease of average island size and size dispersion. The effect is interpreted in terms of ion-beam-induced form