✦ LIBER ✦
(Invited) Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures
✍ Scribed by Stesmans, A.; Nguyen, S.; Afanas'ev, V. V.
- Book ID
- 126664616
- Publisher
- The Electrochemical Society
- Year
- 2014
- Tongue
- English
- Weight
- 105 KB
- Volume
- 64
- Category
- Article
- ISSN
- 1938-6737
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