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Investigation on the Neff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations
✍ Scribed by Z. Li; C.J. Li; V. Eremin; E. Verbitskaya
- Book ID
- 107923199
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 788 KB
- Volume
- 377
- Category
- Article
- ISSN
- 0168-9002
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