Investigation of β-In2S3 growth on different transparent conductive oxides

✍ Scribed by N Barreau; S Marsillac; J.C Bernède; A Barreau

• Book ID: 104309102
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 558 KB
• Volume: 161
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00040-4

✦ Synopsis

Thin films of b-In S , obtained by physical vapor deposition process followed by a post-annealing, are studied on bare 2 3 Ž . glass substrates and those coated with SnO , In O and ZnO transparent conductive oxides TCOs . These films have an 2 2 3

optical band gap of about 2.8 eV, good covering efficiency, and n-type conductivity, making them good candidates for buffer layer in CuInSe solar cells. The structural, optical and morphological properties of these bilayers have been studied 2 with X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy depth profiling, and optical transmission. All results show that our method of synthesis allows us to grow b-In S films on glass and TCO-coated glass 2 3 coated substrates. Moreover, these films are exempt from pinholes, cracks, or other morphological defaults even for very small thickness.